Ghavam Shahidi
Electrical engineer, Project participant
Who is Ghavam Shahidi?
Ghavam Shahidi is an Iranian-American electrical engineer and IBM Fellow.
He studied electrical engineering at MIT, where he wrote a PhD thesis on "velocity overshoot in deeply scaled MOSFETs", under supervision of Professor Dimitri Antoniadis. Shahidi joined IBM Research in 1989, where he initiated and subsequently led the development of silicon on insulator complementary metal–oxide–semiconductor technology at IBM. This work resulted in the qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003. He then moved back to IBM's Watson's Laboratory as the Director of Silicon Technology. Shahidi received the Institute of Electrical and Electronics Engineers' J J Ebers Award in 2006.
We need you!
Help us build the largest biographies collection on the web!
- Nationality
- United States of America
- Profession
- Education
- Massachusetts Institute of Technology
- Employment
- IBM
Submitted
on July 23, 2013
Citation
Use the citation below to add to a bibliography:
Style:MLAChicagoAPA
"Ghavam Shahidi." Biographies.net. STANDS4 LLC, 2024. Web. 26 Apr. 2024. <https://www.biographies.net/people/en/ghavam_shahidi>.
Discuss this Ghavam Shahidi biography with the community:
Report Comment
We're doing our best to make sure our content is useful, accurate and safe.
If by any chance you spot an inappropriate comment while navigating through our website please use this form to let us know, and we'll take care of it shortly.
Attachment
You need to be logged in to favorite.
Log In